Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

195A Tc

Drive Voltage (Max Rds On, Min Rds On)  

6V 10V

Number of Elements  

1

Power Dissipation (Max)  

230W Tc

Turn Off Delay Time  

78 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®, StrongIRFET™

Published  

2012

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

1.8MOhm

Terminal Form  

GULL WING

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

230W

Case Connection  

DRAIN

Turn On Delay Time  

19 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.8m Ω @ 100A, 10V

Vgs(th) (Max) @ Id  

3.9V @ 150μA

Input Capacitance (Ciss) (Max) @ Vds  

7330pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

225nC @ 10V

Rise Time  

70ns

Vgs (Max)  

±20V

Fall Time (Typ)  

53 ns

Continuous Drain Current (ID)  

195A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

40V

Avalanche Energy Rating (Eas)  

802 mJ

Nominal Vgs  

3 V

Height  

4.83mm

Length  

10.67mm

Width  

9.65mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free